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Electronic Properties of Ga(In)NAs Alloys
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material.ORCID-id: 0000-0001-7155-7103
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material.ORCID-id: 0000-0002-6405-9509
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
2001 (engelsk)Inngår i: MRS Internet journal of nitride semiconductor research, ISSN 1092-5783, E-ISSN 1092-5783, Vol. 6Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

 A brief review on the present knowledge of the electronic properties of the Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental perspective. The discussion is focused on Ga(In)NAs with low N composition (< 10 %), where a large amount of experimental work has been done. Important fundamental electronic properties of the material system are analyzed with the emphasis on the nature of the giant band gap bowing in the alloy and nitrogen-induced modifications of the electronic structure of the conduction band. The current knowledge of the key material parameters, relevant for the device applications, such as electron effective mass, recombination processes and band alignment in Ga(In)NAs/GaAs heterostructures, is also reviewed.

sted, utgiver, år, opplag, sider
2001. Vol. 6
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URN: urn:nbn:se:liu:diva-45110Lokal ID: 79719OAI: oai:DiVA.org:liu-45110DiVA, id: diva2:265972
Tilgjengelig fra: 2009-10-10 Laget: 2009-10-10 Sist oppdatert: 2017-12-13

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