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Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material.ORCID-id: 0000-0001-7155-7103
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material.ORCID-id: 0000-0002-6405-9509
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
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1999 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 75, nr 24, s. 3781-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

 The effect of growth temperature on the optical properties of GaAs/GaNxAs1-x quantum wells is studied in detail using photoluminescence (PL) spectroscopies. An increase in growth temperature up to 580 °C is shown to improve the optical quality of the structures, while still allowing one to achieve high (>3%) N incorporation. This conclusion is based on: (i) an observed increase in intensity of the GaNAs-related near-band-edge emission; (ii) a reduction in band-edge potential fluctuations, deduced from the analysis of the PL line shape; and (iii) a decrease in concentration of some extended defects detected under resonant excitation of the GaNAs. The thermal quenching of the GaNAs-related PL emission, however, is almost independent of the growth temperature and is attributed to a thermal activation of an efficient nonradiative recombination channel located in the GaNAs layers.

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1999. Vol. 75, nr 24, s. 3781-
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URN: urn:nbn:se:liu:diva-45149DOI: 10.1063/1.125454Lokal ID: 79834OAI: oai:DiVA.org:liu-45149DiVA, id: diva2:266011
Tilgjengelig fra: 2009-10-10 Laget: 2009-10-10 Sist oppdatert: 2017-12-13

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