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Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
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2004 (engelsk)Inngår i: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 201, nr 10, s. 2265-2270Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report on hydride vapor phase epitaxial growth of thick nonpolar GaN films on r-plane sapphire in comparison with polar GaN films on c-plane sapphire substrates with AlN buffer layers, aiming at developing of their quasi-substrate application. Both the thick films and the buffers were identified to have single crystalline structures. The microstructure of the films was studied by transmission electron microscopy. High resolution X-ray diffraction mapping and photoluminescence measurements were employed to characterize the strain present in both polar and nonpolar GaN films. In contrast to c-plane GaN, which is always characterised by isotropic in-plane properties, the a-plane GaN shows a strong in-plane anisotropy of the growth rate, morphology and strain distribution. Different defect, impurity and free carrier concentrations were observed in the polar and nonpolar material.

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2004. Vol. 201, nr 10, s. 2265-2270
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URN: urn:nbn:se:liu:diva-46187DOI: 10.1002/pssa.200404818OAI: oai:DiVA.org:liu-46187DiVA, id: diva2:267083
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

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