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Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
R and D Division, Furukawa Co. Ltd., Tsukuba, Ibaraki, 305-0865, Japan.
Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588, United States.
Vise andre og tillknytning
2008 (engelsk)Inngår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 310, nr 5, s. 959-965Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The lattice parameters of low-defect density undoped bulk GaN fabricated by halide vapor phase epitaxy (HVPE) and removal of the substrate are precisely determined using high-resolution X-ray diffraction. The obtained values, c = 5.18523 over(A, °) and a = 3.18926 over(A, °) are compared with the lattice parameters of free-standing HVPE-GaN from different sources and found to be representative for state-of-the-art undoped HVPE bulk GaN material. A comparison with bulk GaN fabricated by the high pressure technique and homoepitaxial GaN layer is made, and the observed differences are discussed in terms of their free-electron concentrations, point and structural defects. © 2007 Elsevier B.V. All rights reserved.

sted, utgiver, år, opplag, sider
2008. Vol. 310, nr 5, s. 959-965
Emneord [en]
A1. GaN bulk, A1. High-resolution x-ray diffraction, A1. Lattice parameters, A1. Point and extended defects, B3. Hydride/Halide vapor phase epitaxy
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Identifikatorer
URN: urn:nbn:se:liu:diva-46722DOI: 10.1016/j.jcrysgro.2007.11.130OAI: oai:DiVA.org:liu-46722DiVA, id: diva2:267618
Merknad
Presented at: E-MRS,2007Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

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