liu.seSearch for publications in DiVA
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
The influence of thermal annealing on residual stresses and mechanical properties of arc-evaporated TiCxN1−x (x=0, 0,15 and 0,45) thin films
SECO Tools AB.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0002-2837-3656
Vise andre og tillknytning
2002 (engelsk)Inngår i: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 50, nr 20, s. 5103-5114Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report the stress relaxation behavior of arc-evaporated TiCxN1−x thin films during isothermal annealing between 350 and 900°C. Films with x=0, 0,15 and 0,45 each having an initial compressive intrinsic stress σint = -5.4 GPa were deposited by varying the substrate bias Vs and the gas composition. Annealing above the deposition temperature leads to a steep decrease in the magnitude of σint to a saturation stress value, which is a function of the annealing temperature. The corresponding apparent activation energies for stress relaxation are Ea=2.4, 2.9, and 3.1 eV, for x=0, 0,15 and 0,45 respectively. TiC0.45N0.55 films with a lower initial stress σint = -3 GPa obtained using a high substrate bias, show a higher activation energy Ea=4.2 eV.In all the films, stress relaxation is accompanied by a decrease in defect density indicated by the decreased width of X-ray diffraction peaks and decreased strain contrast in transmission electron micrographs. Correlation of these results with film hardness and microstructure measurements indicates that the stress relaxation is a result of point-defect annihilation taking place both during short-lived metal-ion surface collision cascades during deposition, and during post-deposition annealing by thermally activated processes. The difference in Ea for the films of the same composition deposited at different Vs suggests the existence of different types of point-defect configurations and recombination mechanisms.

sted, utgiver, år, opplag, sider
2002. Vol. 50, nr 20, s. 5103-5114
Emneord [en]
Activation energies, Annealing, Arc evaporation, Hardness, PVD-coating, Residual stresses, Thermal stability, Titanium carbonitride
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-46790DOI: 10.1016/S1359-6454(02)00365-8OAI: oai:DiVA.org:liu-46790DiVA, id: diva2:267686
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekst

Personposter BETA

Hörling, AndersHultman, Lars

Søk i DiVA

Av forfatter/redaktør
Hörling, AndersHultman, Lars
Av organisasjonen
I samme tidsskrift
Acta Materialia

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 167 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf