liu.seSearch for publications in DiVA
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0001-8116-9980
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0001-5768-0244
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
2002 (engelsk)Inngår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 243, nr 1, s. 170-184Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Complete 3D simulations of a silicon carbide chemical vapor deposition (CVD) reactor, including inductive heating and fluid dynamics as well as gas phase and surface chemistry, have been performed. For the validation of simulated results, growth was conducted in a horizontal hot-wall CVD reactor operating at 1600°C, using SiH4 and C3H8 as precursor gases. Simulations were performed for an experimental hot-wall CVD reactor, but the results are applicable to any reactor configuration since no adjustable parameters were used to fit experimental data. The simulated results obtained are in very good agreement with experimental values. It is shown that including etching and parasitic growth on all reactor walls exposed to the gas greatly improves the accuracy of the simulations. © 2002 Elsevier Science B.V. All rights reserved.

sted, utgiver, år, opplag, sider
Elsevier, 2002. Vol. 243, nr 1, s. 170-184
Emneord [en]
A1. Computer simulation, A1. Growth models, A3. Chemical vapor deposition, A3. Hot wall epitaxy, B2. Semiconducting silicon carbide
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-46924DOI: 10.1016/S0022-0248(02)01486-0ISI: 000178476600025OAI: oai:DiVA.org:liu-46924DiVA, id: diva2:267820
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekst

Personposter BETA

Danielsson, ÖrjanHenry, AnneJanzén, Erik

Søk i DiVA

Av forfatter/redaktør
Danielsson, ÖrjanHenry, AnneJanzén, Erik
Av organisasjonen
I samme tidsskrift
Journal of Crystal Growth

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 93 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf