liu.seSearch for publications in DiVA
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Influence of gate metal film growth parameters on the properties of gas sensitive field-effect devices
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0001-9140-6724
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0002-2837-3656
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.ORCID-id: 0000-0002-0873-2877
2002 (engelsk)Inngår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 409, nr 2, s. 233-242Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Thin films of Pt have been grown as gate metals on the oxide surface of gas sensitive field-effect devices. Both electron beam evaporation and dc magnetron sputtering has been used. The energy of the impinging Pt atoms, the substrate temperature and the thickness of the Pt film were used as parameters in this study. The influence of the growth parameters on the gas response has been investigated and compared with the properties of the films, studied by transmission electron microscopy, Auger electron spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction. The conditions during growth of the Pt film are found to have a large impact on the properties of the device. As expected, crystallinity, morphology and the metal/substrate interfacial structure are also affected by processing parameters. Three different growth processes stand out as the most promising from gas sensor considerations, namely room temperature evaporation, sputtering at high pressures and sputtering at high temperatures. The correlation between gas responses and properties of the gas sensitive layer is discussed. © 2002 Elsevier Science B.V. All rights reserved.

sted, utgiver, år, opplag, sider
2002. Vol. 409, nr 2, s. 233-242
Emneord [en]
Deposition process, Metal-oxide semiconductor structure, Platinum, Sensors
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-47031DOI: 10.1016/S0040-6090(02)00135-9OAI: oai:DiVA.org:liu-47031DiVA, id: diva2:267927
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekst

Personposter BETA

Persson, PerHultman, LarsEriksson, Mats

Søk i DiVA

Av forfatter/redaktør
Persson, PerHultman, LarsEriksson, Mats
Av organisasjonen
I samme tidsskrift
Thin Solid Films

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 484 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf