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n-type Si/SiGe resonant tunnelling diodes
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom.
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för teknik och naturvetenskap.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik.
Vise andre og tillknytning
2002 (engelsk)Inngår i: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 89, nr 1-3, s. 26-29Konferansepaper, Publicerat paper (Annet vitenskapelig)
Abstract [en]

Resonant tunnelling diodes (RTDs) have been fabricated using Si/SiGe heterolayers which demonstrate room temperature performance comparable to III-V technology. Peak current densities up to 282 kA cm-2 with peak-to-valley current ratios (PVCRs) of 2.4 have been demonstrated at room temperature in devices with dimensions of 5 × 5 µm2. Scaling the device size demonstrates that the peak current density is inversely proportional to the device area. It is suggested that this is related to thermal limitations in the device structure. Estimates are also produced for the maximum frequency of oscillations of the diodes which suggest that oscillators may operate with speeds comparable to III-V diodes. © 2002 Elsevier Science B.V. All rights reserved.

sted, utgiver, år, opplag, sider
2002. Vol. 89, nr 1-3, s. 26-29
Emneord [en]
Electronic device, Germanium, Quantum effects, Silicon, Tunnelling
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-47102DOI: 10.1016/S0921-5107(01)00785-1OAI: oai:DiVA.org:liu-47102DiVA, id: diva2:267998
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

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Zozoulenko, IgorBerggren, Karl-Fredrik

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