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Status and perspectives of nanoscale device modelling
Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via Diotisalvi, 2 I-56126 Pisa, Italy.
Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via Diotisalvi, 2 I-56126 Pisa, Italy.
National Microelectronics Research Center, Lee Maltings, Cork, Ireland.
Departament d'Estructura I Constituents de la Materia, Facultat de Física, Universitat de Barcelona, E-08028 Barcelona, Spain.
Vise andre og tillknytning
2001 (engelsk)Inngår i: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 12, nr 2, s. 136-142Konferansepaper, Publicerat paper (Annet vitenskapelig)
Abstract [en]

During the meetings of the theory and modelling working group, within the MEL-ARI (Microelectronics Advanced Research Initiative) and NID-FET (Nanotechnology Information Devices-Future and Emerging Technologies) initiatives of the European Commission, we have been discussing the current status and the future perspectives of nanoscale device modelling. The outcome of such a discussion is summarized in the present paper, outlining the major challenges for the future, such as the integration of nonequilibrium phenomena and of molecular-scale properties. We believe that modelling has a growing importance in the development of nanoelectronic devices and must therefore make a move from physics to engineering, providing valid design tools, with quantitative predictive capabilities.

sted, utgiver, år, opplag, sider
2001. Vol. 12, nr 2, s. 136-142
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Identifikatorer
URN: urn:nbn:se:liu:diva-47362DOI: 10.1088/0957-4484/12/2/313OAI: oai:DiVA.org:liu-47362DiVA, id: diva2:268258
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

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