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Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0001-9140-6724
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2000 (engelsk)Inngår i: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 3, nr 5-6, s. 523-528Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Er and O co-doped Si structures have been prepared using molecular-beam epitaxy (MBE) with fluxes of Er and O obtained from Er and silicon monoxide (SiO) evaporation in high-temperature cells. The incorporation of Er and O has been studied for concentrations of up to 2×1020 and 1×1021 cm-3, respectively. Surface segregation of Er can take place, but with O co-doping the segregation is suppressed and Er-doped layers without any indication of surface segregation can be prepared. Si1-xGex and Si1-yCy layers doped with Er/O during growth at different substrate temperatures show more defects than corresponding Si layers. Strong emission at 1.54µm associated with the intra-4f transition of Er3+ ions is observed in electroluminescence (EL) at room temperature in reverse-biased p-i-n-junctions. To optimize the EL intensity we have varied the Er/O ratio and the temperature during growth of the Er/O-doped layer. Using an Er-concentration of around 1×1020 cm-3 we find that Er/O ratios of 1:2 or 1:4 give higher intensity than 1:1 while the stability with respect to breakdown is reduced for the highest used O concentrations. For increasing growth temperatures in the range 400-575 °C there is an increase in the EL intensity. A positive effect of post-annealing on the photoluminescence intensity has also been observed.

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2000. Vol. 3, nr 5-6, s. 523-528
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URN: urn:nbn:se:liu:diva-47578DOI: 10.1016/S1369-8001(00)00075-5OAI: oai:DiVA.org:liu-47578DiVA, id: diva2:268474
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

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