liu.seSearch for publications in DiVA
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures
Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0001-7155-7103
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
Lindström, J.L., Solid State Physics, Univ. of Lund, Box 118, S-221 00, Lund, Sweden.
Vise andre og tillknytning
2000 (engelsk)Inngår i: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 72, nr 2, s. 146-149Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Photoluminescence (PL) spectroscopy is employed to investigate radiative defects created in Si during electron-irradiation at elevated temperatures. The use of high temperature during electron irradiation has been found to affect considerably the defect formation process. The effect critically depends on the temperature of the irradiation as well as doping of the samples. For carbon-lean Si wafers high temperature electron irradiation stimulates the formation of extended defects, such as dislocations and precipitates. For carbon-rich Si wafers the increase of irradiation temperature up to 300°C enhances the formation of the known carbon-related defects. In addition, several new excitonic PL lines were observed after electron irradiation at T = 450°C. The dominant new PL center gives rise to a BE PL emission at 0.961 eV. The electronic structure of the 0.961 eV defect is discussed based on temperature-dependent and magneto-optical studies.

sted, utgiver, år, opplag, sider
2000. Vol. 72, nr 2, s. 146-149
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-47679DOI: 10.1016/S0921-5107(99)00491-2OAI: oai:DiVA.org:liu-47679DiVA, id: diva2:268575
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekst

Personposter BETA

Buyanova, Irina A.Monemar, Bo

Søk i DiVA

Av forfatter/redaktør
Buyanova, Irina A.Monemar, Bo
Av organisasjonen
I samme tidsskrift
Materials Science & Engineering: B. Solid-state Materials for Advanced Technology

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 143 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf