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Orientation-dependent defect formation in silicon carbide epitaxial layers
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Vise andre og tillknytning
2003 (engelsk)Inngår i: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, s. 281-284Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Thick SiC epitaxial layers have been grown by sublimation on different initial surfaces in the range of 1800-2200degreesC. Evidences have been obtained that independently of the polytype and the surface polarity, there exists a transition region between the substrate and the epilayer in which the crystal structure is highly disturbed either by formation of misfit dislocations, predominantly in growth on vicinal (off-axis) surfaces or by domain boundaries and polytype transformation during growth on atomically flat (on-axis) surfaces. The transition layer thickness may vary from 15 to 50 mum and it seems to depend on the growth rate.

sted, utgiver, år, opplag, sider
2003. Vol. 433-4, s. 281-284
Emneord [en]
structural defects, sublimation growth, transition layer
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-48540OAI: oai:DiVA.org:liu-48540DiVA, id: diva2:269436
Konferanse
ECSCRM2002
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2010-12-10

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Yakimova, RositsaSyväjärvi, MikaelIakimov, TihomirJanzén, Erik

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