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Small-signal substrate resistance effect in RF CMOS identified through device simulations
Ericsson Microelect AB, S-16481 Stockholm, Sweden.
Ericsson Microelect AB, S-16481 Stockholm, Sweden.
2001 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 48, nr 2, s. 397-399Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

An anomalous dip in the measured s(22) characteristic, as well as a decrease in the output resistance, of MOS devices for rf applications was found to be a pure ac effect caused by the small-signal substrate transconductance. The study of the ac characteristics of multifinger transistors in rf applications with high-resistivity substrate also puts a question mark on the possibility of achieving fully scalable models, considering the observed ac substrate effect.

sted, utgiver, år, opplag, sider
2001. Vol. 48, nr 2, s. 397-399
Emneord [en]
microwave transistors, MOSFETs, semiconductor device modeling
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-49375OAI: oai:DiVA.org:liu-49375DiVA, id: diva2:270271
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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