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Pseudo-donors in SiC
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp Res, SE-72178 Vasteras, Sweden.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.ORCID-id: 0000-0001-5768-0244
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
2000 (engelsk)Inngår i: Materials Science Forum, Vols. 338-342, 2000, Vol. 338-342, s. 647-650Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

We report on the properties of two well known bound excitons (BE) in silicon carbide, the D-1-BE and a hydrogen related BE, here called the II-BE. We find that in both cases the BE may be regarded as a pseudo-donor, a strongly localised hole serving as the positive core. In order to study the donor-like states of the BE, we use photoluminescence excitation (PLE) spectroscopy. Where possible, we have compared our results with the predictions of effective-mass-theory.

sted, utgiver, år, opplag, sider
2000. Vol. 338-342, s. 647-650
Serie
Materials Science Forum, ISSN 1662-9752 ; 338-342
Emneord [en]
bound excitons, defects, photoluminescence
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-49442DOI: 10.4028/www.scientific.net/MSF.338-342.647OAI: oai:DiVA.org:liu-49442DiVA, id: diva2:270338
Konferanse
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, 10-15 October 1999
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2015-03-11

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