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Low-energy-ion-assisted reactive sputter deposition of epitaxial AlN thin films on 6H-SiC
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0001-9140-6724
Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0003-2749-8008
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0002-2837-3656
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2000 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, s. 1519-1522Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Epitaxial wurzite-structure AIN thin films have been grown on 6H-SiC substrates by ultra-high-vacuum (UHV) low-energy-ion-assisted reactive de magnetron sputtering. The quality of epitaxial AIN films is significantly improved by low-energy ion assistance (E-i = 17-27 eV), during reactive magnetron sputter growth on vicinal (3.5 degrees) 6H-SiC. The ion-assisted growth results in an increased surface mobility, which promotes domain boundary annihilation and epitaxial growth. This results in lateral expansion of column width. Thus, AIN films with domains as large as 40 nm at the interface to 6H-SiC can be realized. At film thickness above 100 nm, the column width expands to 100 nm. The crystal quality of the films is very good with low background impurities (O: 3.5x10 (18)cm(-3)).

sted, utgiver, år, opplag, sider
2000. Vol. 338-3, s. 1519-1522
Emneord [en]
6H-SiC, AlN, cathodoluminescence, epitaxial, sputtering, TEM, XRD
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-49461OAI: oai:DiVA.org:liu-49461DiVA, id: diva2:270357
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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Tungasmita, SukkanestePersson, PerJärrendahl, KennethHultman, LarsBirch, Jens

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