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The SiC(0001) root 3 x root 3 surface state
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
2000 (engelsk)Inngår i: Surface Science, ISSN 0039-6028, Vol. 465, nr 1-2, s. L759-L763s. L759-L763Artikkel i tidsskrift, Letter (Annet vitenskapelig) Published
Abstract [en]

An angle resolved photoemission study of the surface state on the 6H-SiC(0001) root3 x root3 surface is reported. The symmetry of the surface state is determined and effects induced after oxygen and sodium exposures are investigated. The periodicity of the surface dispersion is investigated in two different azimuthal directions. The expected root3 x root3 periodicity of a Mott-Hubbard ground state was not observed when going outside the first root3 x root3 Surface Brillouin Zone. (C) 2000 Elsevier Science B.V. All rights reserved.

sted, utgiver, år, opplag, sider
Elsevier , 2000. Vol. 465, nr 1-2, s. L759-L763s. L759-L763
Emneord [en]
angle resolved photoemission, silicon carbide, single crystal surfaces, surface electronic phenomena (work function, surface potential, surface states, etc.)
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Identifikatorer
URN: urn:nbn:se:liu:diva-49512DOI: 10.1016/S0039-6028(00)00756-1OAI: oai:DiVA.org:liu-49512DiVA, id: diva2:270408
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2019-08-20bibliografisk kontrollert

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