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Defect distribution in a-plane GaN on Al2 O3
Laboratory of Physics, Helsinki University of Technology, FI-02015 TKK, Finland.
Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany.
Kröger, R., Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany.
Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany.
Vise andre og tillknytning
2007 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, nr 12Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The authors studied the structural and point defect distributions of hydride vapor phase epitaxial GaN film grown in the [11-20] a direction on (1-102) r -plane sapphire with metal-organic vapor phase deposited a-GaN template using transmission electron microscopy, secondary ion mass spectrometry, and positron annihilation spectroscopy. Grown-in extended and point defects show constant behavior as a function of thickness, contrary to the strong nonuniform defect distribution observed in GaN grown along the [0001] direction. The observed differences are explained by orientation-dependent and kinetics related defect incorporation. © 2007 American Institute of Physics.

sted, utgiver, år, opplag, sider
2007. Vol. 90, nr 12
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-49956DOI: 10.1063/1.2715128OAI: oai:DiVA.org:liu-49956DiVA, id: diva2:270852
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-12

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