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AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0001-5768-0244
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0003-3203-7935
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
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2009 (engelsk)Inngår i: ECS Transactions, Vol. 25, Iss. 8, ECS , 2009, s. 837-844Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

AlxGa1-xN multiple quantum wells (MQW) were grown on AlN epilayer grown on 4H-SiC substrate. The growth was performed without interruption in a horizontal hot-wall MOCVD reactor using a mixture of hydrogen and nitrogen as carrier gases. The precursors were ammonia, trimethylaluminum and trimethylgallium. Results obtained from X-ray diffraction and infra-red reflectance were used to obtain the composition of the films when growing simple AlxGa1 xN layer. Visible reflectance was used to evaluate the thickness of the films. Finally the MQW parameters as thicknesses and composition variation were obtained by scanning transmission electron microscopy and demonstrated an agreement with the growth parameters used

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ECS , 2009. s. 837-844
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URN: urn:nbn:se:liu:diva-52723DOI: 10.1149/1.3207674ISBN: 978-156677745-2 (tryckt)OAI: oai:DiVA.org:liu-52723DiVA, id: diva2:285304
Konferanse
17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society; Vienna; Austria
Tilgjengelig fra: 2010-01-11 Laget: 2010-01-11 Sist oppdatert: 2015-03-09

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Henry, AnneLundskog, AndersPalisaitis, JustinasIvanov, IvanKakanakova-Georgieva, AneliaForsberg, UrbanPersson, PerJanzén, Erik

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Totalt: 174 treff
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