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Electronic structure of the thallium-induced 2x1 reconstruction on Si(001)
Linköpings universitet, Institutionen för fysik, kemi och biologi, Yt- och Halvledarfysik. Linköpings universitet, Tekniska högskolan. (Yt- och halvledarfysik)
Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Yt- och Halvledarfysik. Linköpings universitet, Tekniska högskolan.
2010 (engelsk)Inngår i: PHYSICAL REVIEW B, ISSN 1098-0121, Vol. 81, nr 20, s. 205422-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

With a Tl coverage of one monolayer, a 2 x 1 reconstruction is formed on the Si (001) surface at room temperature. In this study, low-temperature angle-resolved photoelectron spectroscopy (ARPES) data reveal four surface state bands associated with this Tl induced reconstruction. Calculated surface state dispersions, obtained using the "pedestal + valley-bridge" model, are found to be similar to those obtained using ARPES. Inclusion of spin-orbit coupling in the calculations is found to be important to arrive at these results. A known effect of the strong spin-orbit coupling is the reluctance of the Tl 6s(2) electrons to participate in the bonding, i.e., the inert pair effect. In the calculations, inclusion of spin-orbit coupling results in a similar to 5 eV downshift of the Tl 6s(2) electrons.

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American Physical Society , 2010. Vol. 81, nr 20, s. 205422-
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URN: urn:nbn:se:liu:diva-57166DOI: 10.1103/PhysRevB.81.205422ISI: 000278144500098OAI: oai:DiVA.org:liu-57166DiVA, id: diva2:323555
Merknad
Original Publication: Peter Eriksson, Kazuyuki Sakamoto and Roger Uhrberg, Electronic structure of the thallium-induced 2x1 reconstruction on Si(001), 2010, PHYSICAL REVIEW B, (81), 20, 205422. http://dx.doi.org/10.1103/PhysRevB.81.205422 Copyright: American Physical Society http://www.aps.org/ Tilgjengelig fra: 2010-06-11 Laget: 2010-06-11 Sist oppdatert: 2012-02-06

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