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Free standing AIN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Newcastle University.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanostrukturerade material. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Vise andre og tillknytning
2010 (engelsk)Inngår i: Materials Science Forum, Vols. 645-648, Transtec Publications; 1999 , 2010, Vol. 645-648, s. 1187-1190Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Free standing AIN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is based on the coalescence of AIN microrods, which evolve from the apex of SiC pyramids grown on the SIC substrate during a temperature ramp up for in situ patterned substrate and SiC pyramids formed by reactive ion etching (RIE). This process yields stress-free (according XRD and Raman results) AIN single crystals with a thickness up to 400 mu m and low dislocation density.

sted, utgiver, år, opplag, sider
Transtec Publications; 1999 , 2010. Vol. 645-648, s. 1187-1190
Emneord [en]
Free standing; Hexagonal pyramids; AIN; reactive ion etching; physical vapor transport
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-58215DOI: 10.4028/www.scientific.net/MSF.645-648.1187ISI: 000279657600283OAI: oai:DiVA.org:liu-58215DiVA, id: diva2:338098
Konferanse
ICSCRM2009
Tilgjengelig fra: 2010-08-10 Laget: 2010-08-09 Sist oppdatert: 2013-10-02

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