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A semi-quantitative model for the deposition rate in non-reactive high power pulsed magnetron sputtering
Institute of Physics (IA), RWTH Aachen University, Germany.ORCID-id: 0000-0003-2864-9509
University of Aachen, Germany.
University of Aachen, Germany.
University of Aachen, Germany.
Vise andre og tillknytning
2008 (engelsk)Inngår i: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 41, nr 21, s. 215301-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A theoretical treatment of the deposition process in a non-reactive high power pulsed magnetron sputtering discharge is presented. This leads to the development of a semi-quantitative model that describes the deposition rate as a function of process parameters, such as the target voltage, the peak target current density, the pulse frequency and the pulse duty cycle. The effect of these parameters on the deposition rate is studied experimentally using carbon, chromium and copper targets. The implementation of the model on the experimental results enables the estimation of the relative fractions of the sputtering gas ions (Ar(+)) and the sputtered metal ions (M(+)) in the total ion flux at the target. The M(+) content in the target ion current is calculated to adopt values up to similar to 72% and similar to 98% for the chromium and the copper targets, respectively. In contrast, the target ion current is found to consist mostly of Ar(+) species in the case of the carbon target. The significantly higher fractions of M(+) ions for chromium and copper are attributed to their higher ionization probability and their higher sputtering yield in comparison with carbon.

sted, utgiver, år, opplag, sider
Institute of Physics , 2008. Vol. 41, nr 21, s. 215301-
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-71481DOI: 10.1088/0022-3727/41/21/215301ISI: 000260156200030OAI: oai:DiVA.org:liu-71481DiVA, id: diva2:450210
Tilgjengelig fra: 2011-10-20 Laget: 2011-10-20 Sist oppdatert: 2017-12-08

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