liu.seSearch for publications in DiVA
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
2012 (engelsk)Inngår i: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 86, nr 10, s. 1595-1599Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

3C-SiC layers have been grown by using sublimation epitaxy at a source temperature of 2000 degrees C, under vacuum conditions (andlt;10(-5) mbar) on well oriented (on-axis) 6H-SiC (0001) substrates. Close space sublimation growth geometry has been used in a RF-heated furnace employing high-purity graphite crucible with a possibility to change the growth environment from Si vapor-rich to C vapor-rich. The optical microscopy in transmission mode reveals continuous 3C-domains for 3C-SiC with less than 0.4% 6H-inclusions for the layer grown at Si-rich conditions, and separate 3C-SiC domains for the layer grown at C-rich conditions. The type of 6H-inclusions for layers with continuous domain structure investigated by Atomic Force Microscopy (AFM) is discussed. 2Theta-omega scan shows 0006 and 111 peaks coming from the substrate and the layer, respectively with a higher intensity of the 111 peak for 3C-SiC grown at Si-rich conditions which is related with the continuous character of the 3C-SiC domains.

sted, utgiver, år, opplag, sider
Elsevier , 2012. Vol. 86, nr 10, s. 1595-1599
Emneord [en]
3C-SiC, Sublimation heteroepitaxy, Morphology, AFM, HRXRD
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-79641DOI: 10.1016/j.vacuum.2012.03.020ISI: 000306390200032OAI: oai:DiVA.org:liu-79641DiVA, id: diva2:543969
Merknad
Funding Agencies|European Community through the MANSiC|MRTN-CT-2006-035735|Tilgjengelig fra: 2012-08-13 Laget: 2012-08-13 Sist oppdatert: 2017-12-07

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekst

Personposter BETA

Beshkova, MilenaBirch, JensSyväjärvi, MikaelYakimova, Rositsa

Søk i DiVA

Av forfatter/redaktør
Beshkova, MilenaBirch, JensSyväjärvi, MikaelYakimova, Rositsa
Av organisasjonen
I samme tidsskrift
Vacuum

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 281 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf