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Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
University of Oxford, England .
University of Oxford, England .
University of Oxford, England .
University of Oxford, England .
Vise andre og tillknytning
2013 (engelsk)Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 87, nr 4, s. 045414-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by similar to 40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of T-e(4) at low temperatures and depend weakly on carrier density proportional to n(-1/2), evidence for enhancement of the energy loss rate due to disorder in CVD samples.

sted, utgiver, år, opplag, sider
American Physical Society , 2013. Vol. 87, nr 4, s. 045414-
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-88456DOI: 10.1103/PhysRevB.87.045414ISI: 000313424700006OAI: oai:DiVA.org:liu-88456DiVA, id: diva2:604079
Merknad

Funding Agencies|UK EPSRC||Swedish Research Council||Foundation for Strategic Research||UK National Measurement Office||EU||

Tilgjengelig fra: 2013-02-07 Laget: 2013-02-07 Sist oppdatert: 2017-12-06

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