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Effect of thermal annealing on defects in post-growth hydrogenated GaNP
Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material. Linköpings universitet, Tekniska högskolan.
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA .
INFM and Dipartimento di Fisica, Università di Roma “La Sapienza”, Roma, Italy.
INFM and Dipartimento di Fisica, Università di Roma “La Sapienza,” Roma, Italy .
Vise andre og tillknytning
2013 (engelsk)Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 10, nr 4, s. 561-563Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Effect of thermal annealing on paramagnetic centers in post-growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga-interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near-band edge radiative recombination. Annealing at 400 ºC in Ar-ambient is found to cause quenching of the Gai-related ODMR signals that were activated by post-growth hydrogenation. We tentatively ascribe this effect to dissociation of the H-Gai complexes and subsequent out-diffusion of H.

sted, utgiver, år, opplag, sider
John Wiley & Sons, 2013. Vol. 10, nr 4, s. 561-563
Emneord [en]
ODMR, dilute nitrides, Ga interstitial, post-growth hydrogenation, annealing
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-93873DOI: 10.1002/pssc.201200353ISI: 000317284600002OAI: oai:DiVA.org:liu-93873DiVA, id: diva2:627312
Konferanse
E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds. Strasbourg, France. May 14-18, 2012.
Tilgjengelig fra: 2013-06-11 Laget: 2013-06-11 Sist oppdatert: 2017-12-06bibliografisk kontrollert

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