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Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Department of Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska, USA.
Lund University, Maxlab, Lund, Sweden.
Department of Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska, USA.
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2013 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, nr 21, s. 213116-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrates. Correlations between the number of graphene monolayers on one hand and the main transition associated with an exciton enhanced van Hove singularity at ∼4.5 eV and the free-charge carrier scattering time, on the other are established. It is shown that the interface structure on the Si- and C-polarity of the 3C-SiC(111) differs and has a determining role for the thickness and electronic properties homogeneity of the epitaxial graphene.

sted, utgiver, år, opplag, sider
American Institute of Physics (AIP) , 2013. Vol. 102, nr 21, s. 213116-
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URN: urn:nbn:se:liu:diva-96134DOI: 10.1063/1.4808379ISI: 000320620400073OAI: oai:DiVA.org:liu-96134DiVA, id: diva2:640750
Tilgjengelig fra: 2013-08-14 Laget: 2013-08-14 Sist oppdatert: 2017-12-06

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