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Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
University of Oxford, England.
University of Oxford, England.
National Phys Lab, England.
National Phys Lab, England.
Vise andre og tillknytning
2013 (engelsk)Inngår i: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 111, nr 9, s. e096601-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (Ic) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (ρxx=0) shows a [1-(T/Tc)2] dependence and persists up to Tc>45  K at 29 T. With magnetic field Ic was found to increase ∝B3/2 and TcB2. As the Fermi energy approaches the Dirac point, the ν=2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density.

sted, utgiver, år, opplag, sider
American Physical Society , 2013. Vol. 111, nr 9, s. e096601-
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-97659DOI: 10.1103/PhysRevLett.111.096601ISI: 000323610800025OAI: oai:DiVA.org:liu-97659DiVA, id: diva2:649989
Merknad

Funding Agencies|EuroMagNET II||EU|228043|U.K. EPSRC||EU Project ConceptGraphene||NPL Strategic Research Programme||

Tilgjengelig fra: 2013-09-19 Laget: 2013-09-19 Sist oppdatert: 2017-12-06

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