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Growth and Characterization of ZrB2 Thin Films
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
2013 (engelsk)Licentiatavhandling, med artikler (Annet vitenskapelig)
Abstract [en]

In this thesis, growth of ZrB2 thin films by direct current magnetron sputtering is investigatedusing a high vacuum industrial scale deposition system and an ultra-high vacuum laboratory scalesystem. The films were grown from ZrB2 compound targets at temperatures ranging from ambient (without external heating) to 900 °C and with substrate biases from -20 to -120 V. Short deposition times of typically 100 or 300 s and high growth rates of 80-180 nm/min were emphasized to yield films with thicknesses of 300-400 nm. The films were characterized by thinfilm X-ray diffraction with the techniques θ/2θ and ω scans, pole figure measurements andreciprocal space mapping, scanning and transmission electron microscopy, elastic recoil detection analysis and four point probe measurements. The substrates applied were Si(100), Si(111),4H-SiC(0001) and GaN(0001) epilayers grown on 4H-SiC. The Si(111), 4H-SiC(0001) substrates and GaN(0001) epilayers were chosen given their small lattice mismatches to ZrB2 making them suitable for epitaxial growth.The films deposited in the industrial system were found to be close to stoichiometric with a low degree of contaminants, with O being the most abundant at a level of < 1 at.%. Furthermore, the structure of the films is temperature dependent as films deposited in this system without external heating are fiber textured with a 0001-orientation while the films deposited at 550 °C exhibitrandom orientation. In contrast, epitaxial growth was demonstrated in the laboratory scale system on etched 4H-SiC(0001) and Si(111) deposited at 900 °C following outgassing of the substrates at 300 °C and in-situ heat treatment at the applied growth temperature to remove the native oxides. However, films grown on GaN(0001) were found to be 0001 textured at the applied deposition conditions, which make further studies necessary to enable epitaxial growth on this substrate material. Four point probe measurements on the films deposited in the industrial system show typical resistivity values ranging from ˜95 to 200 μΩcm with a trend to lower values for the films deposited at higher temperatures and at higher substrate bias voltages.

sted, utgiver, år, opplag, sider
Linköping: Linköping University Electronic Press, 2013. , s. 53
Serie
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1614
Emneord [en]
Zirconium diboride (ZrB2), Thin film, Magnetron sputtering, Epitaxi, Silicon carbide (SiC)
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-98308DOI: 10.3384/lic.diva-98308Lokal ID: LIU-TEK-LIC-2013:48ISBN: 978-91-7519-532-2 (tryckt)OAI: oai:DiVA.org:liu-98308DiVA, id: diva2:654707
Presentation
2013-11-08, Planck, Fysikhuset, Campus Valla, Linköpings Universitet, Linköping, 10:15 (engelsk)
Opponent
Veileder
Forskningsfinansiär
Swedish Research CouncilTilgjengelig fra: 2013-10-23 Laget: 2013-10-08 Sist oppdatert: 2019-12-08bibliografisk kontrollert
Delarbeid
1. Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)
Åpne denne publikasjonen i ny fane eller vindu >>Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)
Vise andre…
2014 (engelsk)Inngår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 550, s. 285-290Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

ZrB2 thin films have been synthesized using direct current magnetron sputtering from a ZrB2 compound target onto 4H-SiC(0001) and Si(100) substrates kept at different temperatures (no heating, 400 °C, and 550 °C), and substrate bias voltage (-20 V to -80 V). Time-of-flight energy elastic recoil detection analysis shows that all the films are near stoichiometric and have a low degree of contaminants, with O being the most abundant (< 1 at.%). The films are crystalline, and their crystallographic orientation changes from 0001 to a more random orientation with increased deposition temperature. X-ray diffraction pole figures and selected area electron diffraction patterns of the films deposited without heating reveal a fiber-texture growth. Four point probe measurements show typical resistivity values of the films ranging from ~95 to 200 μΩcm, decreasing with increased growth temperature and substrate bias.

Emneord
Zirconium diboride; Silicon carbide; Thin films; Compound target; Industrial scale deposition system; Crystalline films
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-99942 (URN)10.1016/j.tsf.2013.11.040 (DOI)000328499700045 ()
Tilgjengelig fra: 2013-10-23 Laget: 2013-10-23 Sist oppdatert: 2019-12-02bibliografisk kontrollert
2. Magnetron sputtering of epitaxial ZrB2 thin films on 4H-SiC(0001) and Si(111)
Åpne denne publikasjonen i ny fane eller vindu >>Magnetron sputtering of epitaxial ZrB2 thin films on 4H-SiC(0001) and Si(111)
Vise andre…
2014 (engelsk)Inngår i: Physica Status Solidi (a), ISSN 1862-6319, Vol. 211, nr 3, s. 636-640Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Epitaxial ZrB2 thin films were deposited at a temperature of 900 °C on 4H-SiC(0001) and Si(111) substrates by magnetron sputtering from a ZrB2 source at high rate ~80 nm/min. The films were analyzed by thin film X-ray diffraction including pole figure measurements and reciprocal space mapping as well as high resolution electron microscopy.

sted, utgiver, år, opplag, sider
John Wiley & Sons, 2014
Emneord
Zirconium diboride Epitaxial growth Silicon carbide Thin films Magnetron sputtering
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-99944 (URN)10.1002/pssa.201330308 (DOI)000333194100018 ()
Tilgjengelig fra: 2013-10-23 Laget: 2013-10-23 Sist oppdatert: 2016-08-31bibliografisk kontrollert

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