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Silicon carbide field effect transistors for detection of ultra-low concentrations of hazardous volatile organic compounds
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan. Saarland University, Saarbruecken, Germany.
Saarland University, Saarbruecken, Germany.
Vise andre og tillknytning
2014 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, 1067-1070 s.Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Gas sensitive silicon carbide field effect transistors with nanostructured Ir gate layershave been used for the first time for sensitive detection of volatile organic compounds (VOCs) atpart per billion level, for indoor air quality applications. Formaldehyde, naphthalene, and benzenehave been used as typical VOCs in dry air and under 10% and 20% relative humidity. A singleVOC was used at a time to study long-term stability, repeatability, temperature dependence, effectof relative humidity, sensitivity, response and recovery times of the sensors.

sted, utgiver, år, opplag, sider
2014. Vol. 778-780, 1067-1070 s.
Emneord [en]
Silicon carbide, MISFET, Gas sensors, Volatile organic compounds, Indoor air quality
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-109869DOI: 10.4028/www.scientific.net/MSF.778-780.1067ISI: 000336634100254OAI: oai:DiVA.org:liu-109869DiVA: diva2:741554
Merknad

A short term scientific mission (STSM) grant is acknowledged from the COST Action TD1105. SenSiC AB, Sweden, is acknowledged for providing the SiC-FET sensors.

Tilgjengelig fra: 2014-08-28 Laget: 2014-08-28 Sist oppdatert: 2017-12-05bibliografisk kontrollert

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