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Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Center for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, UK.
Microwave Electronics Laboratory, MC2, Chalmers University of Technology, Göteborg, Sweden.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Vise andre og tillknytning
2015 (engelsk)Inngår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 428, s. 54-58Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The crystalline quality of AlGaN/GaN heterostructures was improved by optimization of surface pretreatment of the SiC substrate in a hot-wall metal-organic chemical vapor deposition reactor. X-ray photoelectron spectroscopy measurements revealed that oxygen- and carbon-related contaminants were still present on the SiC surface treated at 1200 °C in H2 ambience, which hinders growth of thin AlN nucleation layers with high crystalline quality. As the H2 pretreatment temperature increased to 1240 °C, the crystalline quality of the 105 nm thick AlN nucleation layers in the studied series reached an optimal value in terms of full width at half-maximum of the rocking curves of the (002) and (105) peaks of 64 and 447 arcsec, respectively. The improvement of the AlN growth also consequently facilitated a growth of the GaN buffer layers with high crystalline quality. The rocking curves of the GaN (002) and (102) peaks were thus improved from 209 and 276 arcsec to 149 and 194 arcsec, respectively. In addition to a correlation between the thermal resistance and the structural quality of an AlN nucleation layer, we found that the microstructural disorder of the SiC surface and the morphological defects of the AlN nucleation layers to be responsible for a substantial thermal resistance. Moreover, in order to decrease the thermal resistance in the GaN/SiC interfacial region, the thickness of the AlN nucleation layer was then reduced to 35 nm, which was shown sufficient to grow AlGaN/GaN heterostructures with high crystalline quality. Finally, with the 35 nm thick high-quality AlN nucleation layer a record low thermal boundary resistance of 1.3×10−8 m2 K/W, measured at an elevated temperature of 160 °C, in a GaN-on-SiC transistor structure was achieved.

sted, utgiver, år, opplag, sider
Elsevier, 2015. Vol. 428, s. 54-58
Emneord [en]
Heat transfer; Metalorganic chemical vapor deposition; Nitrides; High electron mobility transistors
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-117132DOI: 10.1016/j.jcrysgro.2015.07.021ISI: 000360501200009OAI: oai:DiVA.org:liu-117132DiVA, id: diva2:805914
Tilgjengelig fra: 2015-04-17 Laget: 2015-04-17 Sist oppdatert: 2017-12-04bibliografisk kontrollert
Inngår i avhandling
1. MOCVD growth of GaN-based high electron mobility transistor structures
Åpne denne publikasjonen i ny fane eller vindu >>MOCVD growth of GaN-based high electron mobility transistor structures
2015 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. Great effort was put to gain the understanding of the influence of growth parameters on material properties and consequently to establish an advanced and reproducible growth process. Many state-of-the-art material properties of GaN-based HEMT structures were achieved in this work, including superior structural integrity of AlN nucleation layers for ultra-low thermal boundary resistance, excellent control of residual impurities, outstanding and nearly-perfect crystalline quality of GaN epilayers grown on SiC and native GaN substrates, respectively, and record-high room temperature 2DEG mobility obtained in simple AlGaN/GaN heterostructures.

The epitaxial growth of the wide bandgap III-nitride epilayers like GaN, AlN,  AlGaN, and InAlN, as well as various GaN-based HEMT structures was all carried out in a hot-wall metalorganic chemical vapor deposition (MOCVD) system. A variety of structural and electrical characterizations were routinely used to provide fast feedback for adjusting growth parameters and developing improved growth processes.

sted, utgiver, år, opplag, sider
Linköping: Linköping University Electronic Press, 2015. s. 59
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1662
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-117138 (URN)10.3384/diss.diva-117138 (DOI)978-91-7519-073-0 (ISBN)
Disputas
2015-05-12, Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2015-04-17 Laget: 2015-04-17 Sist oppdatert: 2019-11-15bibliografisk kontrollert

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