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Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
2015 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, nr 8, artikkel-id 085301Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H2 atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm2/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 1020 cm−3 at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm2 SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

sted, utgiver, år, opplag, sider
American Institute of Physics (AIP), 2015. Vol. 117, nr 8, artikkel-id 085301
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-117135DOI: 10.1063/1.4913223ISI: 000351132500059OAI: oai:DiVA.org:liu-117135DiVA, id: diva2:805917
Merknad

The authors would like to acknowledge the support from the Swedish Foundation for Strategic Research.

Tilgjengelig fra: 2015-04-17 Laget: 2015-04-17 Sist oppdatert: 2017-12-04bibliografisk kontrollert
Inngår i avhandling
1. MOCVD growth of GaN-based high electron mobility transistor structures
Åpne denne publikasjonen i ny fane eller vindu >>MOCVD growth of GaN-based high electron mobility transistor structures
2015 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. Great effort was put to gain the understanding of the influence of growth parameters on material properties and consequently to establish an advanced and reproducible growth process. Many state-of-the-art material properties of GaN-based HEMT structures were achieved in this work, including superior structural integrity of AlN nucleation layers for ultra-low thermal boundary resistance, excellent control of residual impurities, outstanding and nearly-perfect crystalline quality of GaN epilayers grown on SiC and native GaN substrates, respectively, and record-high room temperature 2DEG mobility obtained in simple AlGaN/GaN heterostructures.

The epitaxial growth of the wide bandgap III-nitride epilayers like GaN, AlN,  AlGaN, and InAlN, as well as various GaN-based HEMT structures was all carried out in a hot-wall metalorganic chemical vapor deposition (MOCVD) system. A variety of structural and electrical characterizations were routinely used to provide fast feedback for adjusting growth parameters and developing improved growth processes.

sted, utgiver, år, opplag, sider
Linköping: Linköping University Electronic Press, 2015. s. 59
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1662
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-117138 (URN)10.3384/diss.diva-117138 (DOI)978-91-7519-073-0 (ISBN)
Disputas
2015-05-12, Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2015-04-17 Laget: 2015-04-17 Sist oppdatert: 2019-11-15bibliografisk kontrollert

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