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A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Vise andre og tillknytning
2010 (engelsk)Inngår i: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 157, nr 4, s. H463-H469Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We present a metal-insulator-semiconductor nonvolatile memory capacitor based on two gold nanoparticle charge storage layers, two HfO(2) layers, and a multilayer HfNO/HfTiO stack. The device exhibits an equivalent oxide thickness of 7.3 nm, a hysteresis of 15 V at a gate voltage of +11 to -8 V, and a storage charge density of 2.75x10(13) cm(-2). A leakage of 3.6x10(-5) A/cm(2) at -10 V, a breakdown voltage of 13.3 V, and good retention properties with a hysteresis window of 10 V following more than 10 h of consecutive write/erase operations with a +/- 7 V swing were demonstrated. The capacitor characteristics are frequency-independent in the 10 kHz-1 MHz range.

sted, utgiver, år, opplag, sider
Electrochemical Society , 2010. Vol. 157, nr 4, s. H463-H469
Emneord [en]
dielectric hysteresis; electric breakdown; gold; high-k dielectric thin films; MIS capacitors; MIS structures; nanoparticles; random-access storage; semiconductor storage
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Identifikatorer
URN: urn:nbn:se:liu:diva-118563DOI: 10.1149/1.3302003ISI: 000275586800085OAI: oai:DiVA.org:liu-118563DiVA, id: diva2:815495
Merknad

Funding Agencies|Israeli Ministry of Trade and Industry; KAMEHA Program

Tilgjengelig fra: 2015-06-01 Laget: 2015-06-01 Sist oppdatert: 2017-12-04

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