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Polarized Emission from Single GaN Quantum Dots Grown by Molecular Beam Epitaxy
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan. Department of Physics, Faculty of Science, Thaksin University, 93110 Phattalung, Thailand .
Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0002-4547-6673
Applied Semiconductor Physics, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S‐41296 Göteborg, Sweden.
Vise andre og tillknytning
2011 (engelsk)Konferansepaper, Publicerat paper (Annet vitenskapelig)
Abstract [en]

Polarization resolved microphotoluminescence measurements of single MBE‐grown GaN/Al(Ga)N quantum dots (QDs) have been performed. The exciton and biexciton peaks with full width at half maximum as narrow as <500 μeV  were observed. Interestingly, there exist both positive and negative binding energies of the biexciton, explained in term of different sizes of the measured dots, resulting in different built‐in electric field. Moreover, a strongly linearly polarized emission is observed for the investigated dots with a degree of linear polarization of about 0.9, interpreted as the valence‐band mixing induced by in‐plane anisotropy due to strain and/or QD shape.

sted, utgiver, år, opplag, sider
2011. Vol. 1399, nr 1, s. 541-542
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-118682DOI: 10.1063/1.3666493ISBN: 978-0-7354-1002-2 (tryckt)OAI: oai:DiVA.org:liu-118682DiVA, id: diva2:816567
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30th International Conference on the Physics of Semiconductors (ICPS)
Tilgjengelig fra: 2015-06-03 Laget: 2015-06-03 Sist oppdatert: 2015-06-18

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