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Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0002-4898-5115
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
Vise andre og tillknytning
2015 (engelsk)Inngår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 430, s. 55-62Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Zirconium diboride (ZrB2) thin films have been deposited on 4H-SiC(0001) substrates by direct current magnetron sputtering from a compound target. The effect of deposition temperature (500-900 degrees C) and sputtering power (100-400 W) on the composition and structure of the films have been investigated. Electron microscopy and X-ray diffraction reveal that high sputtering power values and high deposition temperatures are favorable to enhance the crystalline order of the epitaxial 0001 oriented films. X-ray photoelectron spectroscopy shows that the composition of the films is near-stoichiometric for all deposition temperatures and for high sputtering power values of 300 W and 400 W, whereas under-stoichiometric films arc obtained when applying 100 W or 200 W. Decreasing the deposition temperature, or in particular the sputtering power, result in higher C and O impurity levels. The resistivity of the films was evaluated by four-point-probe measurements and found to scale with the amount of O impurities in the films. The lowest resistivity value obtained is 130 mu Omega cm, which makes the ZrB2 films interesting as an electrical contact material. (C) 2015 Elsevier B.V. All rights reserved.

sted, utgiver, år, opplag, sider
ELSEVIER SCIENCE BV , 2015. Vol. 430, s. 55-62
Emneord [en]
X-ray diffraction; X-ray photoelectron spectroscopy; Physical vapor deposition processes; Borides
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-122186DOI: 10.1016/j.jcrysgro.2015.08.012ISI: 000362014800010OAI: oai:DiVA.org:liu-122186DiVA, id: diva2:865067
Merknad

Funding Agencies|Swedish Research Council (VR) [621 2010-3921]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant) [SFO-Mat-LiU 2009-00971]; VINN Excellence Center Functional Nanoscale Materials (FunMat) [2005-02666]; Knut and Alice Wallenberg Foundation [2011.0143]

Tilgjengelig fra: 2015-10-26 Laget: 2015-10-23 Sist oppdatert: 2017-12-01
Inngår i avhandling
1. ZrB2 Thin Films: Growth and Characterization
Åpne denne publikasjonen i ny fane eller vindu >>ZrB2 Thin Films: Growth and Characterization
2016 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Zirconium diboride, ZrB2, is a ceramic material with bulk properties such as high melting point (3245 °C), high hardness (23 GPa), and low resistivity (~8 μΩcm). Thin film growth of ZrB2 using physical vapor deposition has suffered from problems with films deviating from stoichiometry and with high levels of contaminants, especially high oxygen content. The homogeneity range of ZrB2 is very narrow, and consequently it is vital to achieve the correct stoichiometry to grow films with high crystalline order.

This thesis describes a direct current magnetron sputtering process to grow stoichiometric ZrB2 thin films with a low degree of impurities. Growth of epitaxial ZrB2 films was achieved on 4H-SiC(0001), Si(111) and Al2O3(0001) substrates. The effect of deposition temperature and power applied on the sputtering target was investigated and showed that high power density (8.77 Wcm-2) and high temperature (900 °C) resulted in films with the best composition and the highest crystal quality. ZrB2 films on GaN(0001) templates exhibit an amorphous layer at the film-substrate interface and the resulting films are either polycrystalline or textured.

Resistivity measurements showed that the ZrB2 thin films exhibit typical resistivity values of ~100-250 μΩcm and that the resistivity decreased with increasing deposition temperature.

Nanoindentation was applied to assess the mechanical properties of the films. The epitaxial ZrB2 films exhibit high elastic recovery and a hardness of ~45-50 GPa, twice as high as the literature bulk value. In addition, evaluation of the mechanical properties was performed at high temperatures of up to 600 °C and showed that the epitaxial films retained a higher hardness, compared to textured ZrB2 films and bulk, also at these temperatures.

sted, utgiver, år, opplag, sider
Linköping: Linköping University Electronic Press, 2016. s. 67
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1744
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-128614 (URN)10.3384/diss.diva-128614 (DOI)978-91-7685-833-2 (ISBN)
Disputas
2016-06-17, Planck, Fysikhuset, Campus Valla, Linköping, 09:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2016-05-25 Laget: 2016-05-25 Sist oppdatert: 2019-10-29bibliografisk kontrollert

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Tengdelius, LinaGreczynski, GrzegorzLu, JunForsberg, UrbanHultman, LarsJanzén, ErikHögberg, Hans

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