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Device applications of epitaxial graphene on silicon carbide
Bulgarian Academic Science, Bulgaria.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0002-2837-3656
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
2016 (engelsk)Inngår i: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 128, s. 186-197Artikkel, forskningsoversikt (Fagfellevurdert) Published
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Abstract [en]

Graphene has become an extremely hot topic due to its intriguing material properties allowing for ground-breaking fundamental research and applications. It is one of the fastest developing materials during the last several years. This progress is also driven by the diversity of fabrication methods for graphene of different specific properties, size, quantity and cost. Graphene grown on SiC is of particular interest due to the possibility to avoid transferring of free standing graphene to a desired substrate while having a large area SiC (semi-insulating or conducting) substrate ready for device processing. Here, we present a review of the major current explorations of graphene on SiC in electronic devices, such as field effect transistors (FET), radio frequency (RF) transistors, integrated circuits (IC), and sensors. The successful role of graphene in the metrology sector is also addressed. Typical examples of graphene on SiC implementations are illustrated and the drawbacks and promises are critically analyzed. (C) 2016 Elsevier Ltd. All rights reserved.

sted, utgiver, år, opplag, sider
PERGAMON-ELSEVIER SCIENCE LTD , 2016. Vol. 128, s. 186-197
Emneord [en]
Graphene FET; RF-transistors; IC; Graphene sensors; Detectors; Quantum Hall resistance
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Identifikatorer
URN: urn:nbn:se:liu:diva-129150DOI: 10.1016/j.vacuum.2016.03.027ISI: 000376052500026OAI: oai:DiVA.org:liu-129150DiVA, id: diva2:936056
Merknad

Funding Agencies|European Union [604391]; Swedish Research Council [VR 621-2014-5805]; LiU Linnaeus Grant

Tilgjengelig fra: 2016-06-13 Laget: 2016-06-13 Sist oppdatert: 2017-11-28

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Hultman, LarsYakimova, Rositsa

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