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Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC
University of Cambridge, England.
Chalmers, Sweden.
University of Cambridge, England.
National Phys Lab, England.
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2017 (Engelska)Ingår i: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 119, s. 426-430Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below T*, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder. (C) 2017 Elsevier Ltd. All rights reserved.

Ort, förlag, år, upplaga, sidor
PERGAMON-ELSEVIER SCIENCE LTD , 2017. Vol. 119, s. 426-430
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URN: urn:nbn:se:liu:diva-138872DOI: 10.1016/j.carbon.2017.04.019ISI: 000402713300050OAI: oai:DiVA.org:liu-138872DiVA, id: diva2:1115975
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Funding Agencies|Engineering and Physical Sciences Research Council [EP/L020963/1]; EU [696656 - GrapheneCore 1]

Tillgänglig från: 2017-06-27 Skapad: 2017-06-27 Senast uppdaterad: 2017-06-27

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