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Charge transport in amorphous InGaZnO thin-film transistors
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
TNO, Netherlands.
Eindhoven University of Technology, Netherlands.
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2012 (Engelska)Ingår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 86, nr 15, artikel-id 155319Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

We investigate the mechanism of charge transport in indium gallium zinc oxide (a-IGZO), an amorphous metal-oxide semiconductor. We measured the field-effect mobility and the Seebeck coefficient (S = Delta V/Delta T) of a-IGZO in thin-film transistors as a function of charge-carrier density for different temperatures. Using these transistors, we further employed a scanning Kelvin probe-based technique to determine the density of states of a-IGZO that is used as the basis for the modeling. After comparing two commonly used models, the band transport percolation model and a mobility edge model, we find that both cannot describe the full properties of the charge transport in the a-IGZO semiconductor. We, therefore, propose a model that extends the mobility edge model to allow for variable range hopping below the mobility edge. The extended mobility edge model gives a superior description of the experimental results. We show that the charge transport is dominated by variable range hopping below, rather than by bandlike transport above the mobility edge.

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American Physical Society , 2012. Vol. 86, nr 15, artikel-id 155319
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URN: urn:nbn:se:liu:diva-141440DOI: 10.1103/PhysRevB.86.155319ISI: 000310259900006OAI: oai:DiVA.org:liu-141440DiVA, id: diva2:1145811
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Funding Agencies|Dutch Technology Foundation STW, applied science division of NWO; Ministry of Economic Affairs [07575]; European Community [246334-2]

Tillgänglig från: 2017-09-29 Skapad: 2017-09-29 Senast uppdaterad: 2017-10-09

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Kemerink, M.
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