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Halide vapor phase epitaxy of Si doped beta-Ga2O3 and its electrical properties
Novel Crystal Technol Inc, Japan; Tamura Corp, Japan; Tokyo Univ Agr and Technol, Japan.
Tokyo Univ Agr and Technol, Japan.
Tokyo Univ Agr and Technol, Japan.
Tokyo Univ Agr and Technol, Japan.
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2018 (Engelska)Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 666, s. 182-184Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Silicon doped homoepitaxial films were grown on beta-gallium oxide (001) substrates by halide vapor phase epitaxy using gallium monochloride, oxygen and silicon tetrachloride gases as precursors. It was confirmed that the n-type carrier density at room temperature was almost equal to the doped silicon concentration, which was controlled in the range of 10(15) to 10(18) cm(-3). In the doped film with the carrier density of 1x10(16) cm(-3), the activation energy and the mobility at room temperature were 45.6 meV and 145 cm(2)/V.s, respectively. The carrier scattering mechanism in the low carrier density film was dominated by optical phonon scattering with the phonon energy of 33 meV. These results suggest that the doped homoepitaxial film grown by halide vapor phase epitaxy is a high quality film with good crystallinity comparable to bulk crystals.

Ort, förlag, år, upplaga, sidor
ELSEVIER SCIENCE SA , 2018. Vol. 666, s. 182-184
Nyckelord [en]
Halide vapor phase epitaxy; Homoepitaxy; beta-Ga2O3; Hall measurement; Electronic properties
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Identifikatorer
URN: urn:nbn:se:liu:diva-152363DOI: 10.1016/j.tsf.2018.09.006ISI: 000447178800028OAI: oai:DiVA.org:liu-152363DiVA, id: diva2:1260718
Konferens
45th International Conference on Metallurgical Coatings and Thin Films (ICMCTF)
Anmärkning

Funding Agencies|Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), "Next-generation power electronics" (funding agency: NEDO)

Tillgänglig från: 2018-11-05 Skapad: 2018-11-05 Senast uppdaterad: 2018-11-05

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