Surface Recombination in ZnO Nanorods Grown by Aqueous Chemical MethodVisa övriga samt affilieringar
2009 (Engelska)Ingår i: PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors / [ed] Marília J. Caldas, Nelson Studart, Melville, N.Y, USA: American Institute of Physics (AIP), 2009, s. 319-320Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]
ZnO nanorods on Si substrates were prepared by either a two-steps chemical bath deposition (CBD) method or thermal evaporation technique. 11 was found that the effective decay time of the near bandgap recombinations strongly depends on the method, which was used to grow the ZnO nanorods. ZnO nanorods grown by the CBD exhibit characteriristic two-exponential decay curves, while ZnO nanorods grown by thermal evaporation technique show single exponential decays. The experimental results show that the fast exponential decay from the CBD grown ZnO nanorods is related to the surface recombination, while the slow decay is related to the "bulk" decay. The results also show that an annealing treatment around 500 degrees C to 700 degrees C significantly reduces the surface recombination rate.
Ort, förlag, år, upplaga, sidor
Melville, N.Y, USA: American Institute of Physics (AIP), 2009. s. 319-320
Serie
AIP Conference Proceedings, ISSN 0094-243X ; 1199
Nyckelord [en]
ZnO nanorods, surface recombination, optical properties and time-resolved photoluminescence
Nationell ämneskategori
Naturvetenskap
Identifikatorer
URN: urn:nbn:se:liu:diva-44290DOI: 10.1063/1.3295430ISI: 000281590800151Lokalt ID: 76181ISBN: 978-0-7354-0736-7 (tryckt)OAI: oai:DiVA.org:liu-44290DiVA, id: diva2:265152
Konferens
PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, ICPS 29, Rio de Janeiro, Brazil, 27 July–1 August 2009
2009-10-102009-10-102015-09-22Bibliografiskt granskad