The carbon vacancy in 4H-SiC was studied by photoexcitation-electron-paramagnetic-resonance (EPR). The different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the associated defects at W-band frequencies. A deep donor model with the (+/0) level located at (1.47±0.06) eV above the valence band could explained the photo-EPR results obtained for positively charged carbon vacancy.