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Hydrogen passivation of self assembled InAs quantum dots
Chalmers.
Chalmer.
Chalmers.ORCID-id: 0000-0001-6235-7038
Chalmers.
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2002 (Engelska)Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, nr 11, s. 6794-6798Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

A systematic study on the hydrogen passivation of nonradiative centers in InAs quantum dots grown on GaAs substrates is presented. The samples used in this study were grown by molecular beam epitaxy. The structures contain an InxGa1-xAs insertion layer between the InAs quantum dots layer and the GaAs cap layer. The thickness and In concentration of the InxGa1-xAs are varied to achieve the emission wavelength at 1.3 mum. The samples after the H-2 plasma treatment show a significant increase of the photoluminescence intensity. The experimental results show that the quality of the InAs quantum dot structures does not degrade after the hydrogen (H-2) plasma treatments. The enhancement of the photoluminescence intensity from the InAs quantum dots is thought to be due to the passivation of nonradiative centers like defects in the structures. High resolution x-ray diffraction rocking curves are used to correlate photoluminescence results.

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American Institute of Physics , 2002. Vol. 92, nr 11, s. 6794-6798
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URN: urn:nbn:se:liu:diva-59157DOI: 10.1063/1.1515379ISI: 000179206600063OAI: oai:DiVA.org:liu-59157DiVA, id: diva2:350189
Tillgänglig från: 2010-09-10 Skapad: 2010-09-09 Senast uppdaterad: 2017-12-12

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