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ZnO-organic hybrid white light emitting diodes grown on flexible plastic using low temperature aqueous chemical method
Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
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2010 (Engelska)Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 108, nr 4, s. 043103-Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

We demonstrate white light luminescence from ZnO-organic hybrid light emitting diodes grown at 90 degrees C on flexible plastic substrate by aqueous chemical growth. The configuration used for the ZnO-organic hybrid white light emitting diodes (WLEDs) consists of a layer of poly (9, 9-dioctylfluorene) (PFO) on poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) coated plastic with top ZnO nanorods. Structural, electrical, and optical properties of these WLEDs were measured and analyzed. Room temperature electroluminescence spectrum reveals a broad emission band covering the range from 420 to 750 nm. In order to distinguish the white light components and contribution of the PFO layer we used a Gaussian function to simulate the experimental data. Color coordinates measurement of the WLED reveals that the emitted light has a white impression. The color rendering index and correlated color temperature of the WLED were calculated to be 68 and 5800 K, respectively.

Ort, förlag, år, upplaga, sidor
American Institute of Physics , 2010. Vol. 108, nr 4, s. 043103-
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Identifikatorer
URN: urn:nbn:se:liu:diva-60234DOI: 10.1063/1.3475473ISI: 000281857100016OAI: oai:DiVA.org:liu-60234DiVA, id: diva2:355864
Anmärkning
Original Publication: Nargis Bano, Siama Zaman, A Zainelabdin, S Hussain, I Hussain, Omer Nour and Magnus Willander, ZnO-organic hybrid white light emitting diodes grown on flexible plastic using low temperature aqueous chemical method, 2010, JOURNAL OF APPLIED PHYSICS, (108), 4, 043103. http://dx.doi.org/10.1063/1.3475473 Copyright: American Institute of Physics http://www.aip.org/ Tillgänglig från: 2010-10-08 Skapad: 2010-10-08 Senast uppdaterad: 2017-12-12Bibliografiskt granskad
Ingår i avhandling
1. Fabrication and Characterization of ZnO Nanorods Based Intrinsic White Light Emitting Diodes (LEDs)
Öppna denna publikation i ny flik eller fönster >>Fabrication and Characterization of ZnO Nanorods Based Intrinsic White Light Emitting Diodes (LEDs)
2011 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

ZnO material based hetero-junctions are a potential candidate for the design andrealization of intrinsic white light emitting devices (WLEDs) due to several advantages overthe nitride based material system. During the last few years the lack of a reliable andreproducible p-type doping in ZnO material with sufficiently high conductivity and carrierconcentration has initiated an alternative approach to grow n-ZnO nanorods (NRs) on other ptypeinorganic and organic substrates. This thesis deals with ZnO NRs-hetero-junctions basedintrinsic WLEDs grown on p-SiC, n-SiC and p-type polymers. The NRs were grown by thelow temperature aqueous chemical growth (ACG) and the high temperature vapor liquid solid(VLS) method. The structural, electrical and optical properties of these WLEDs wereinvestigated and analyzed by means of scanning electron microscope (SEM), current voltage(I-V), photoluminescence (PL), cathodoluminescence (CL), electroluminescence (EL) anddeep level transient spectroscopy (DLTS). Room temperature (RT) PL spectra of ZnOtypically exhibit one sharp UV peak and possibly one or two broad deep level emissions(DLE) due to deep level defects in the bandgap. For obtaining detailed information about thephysical origin, growth dependence of optically active defects and their spatial distribution,especially to study the re-absorption of the UV in hetero-junction WLEDs structure depthresolved CL spectroscopy, is performed. At room temperature the CL intensity of the DLEband is increased with the increase of the electron beam penetration depth due to the increaseof the defect concentration at the ZnO NRs/substrate interface. The intensity ratio of the DLEto the UV emission, which is very useful in exploring the origin of the deep level emissionand the distribution of the recombination centers, is monitored. It was found that the deepcenters are distributed exponentially along the ZnO NRs and that there are more deep defectsat the root of ZnO NRs compared to the upper part. The RT-EL spectra of WLEDs illustrateemission band covering the whole visible range from 420 nm and up to 800 nm. The whitelightcomponents are distinguished using a Gaussian function and the components were foundto be violet, blue, green, orange and red emission lines. The origin of these emission lines wasfurther identified. Color coordinates measurement of the WLEDs reveals that the emitted lighthas a white impression. The color rendering index (CRI) and the correlated color temperature(CCT) of the fabricated WLEDs were calculated to be 80-92 and 3300-4200 K, respectively.

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2011. s. 68
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1401
Nyckelord
Zinc Oxide nanorods, White light emitting diode, Photoluminescence, Cathodoluminescence, Electroluminescence, Deep level transient spectroscopy (DLTS)
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
urn:nbn:se:liu:diva-71829 (URN)978-91-7393-054-3 (ISBN)
Disputation
2011-11-11, K3, Kåkenhus, Campus Norrköping, Linköpings universitet, Norrköping, 10:15 (Engelska)
Opponent
Handledare
Tillgänglig från: 2011-11-07 Skapad: 2011-11-07 Senast uppdaterad: 2014-01-15Bibliografiskt granskad

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