Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphereVisa övriga samt affilieringar
2014 (Engelska)Ingår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, s. 243-246Artikel i tidskrift (Refereegranskat) Published
Abstract [en]
We investigated three 3C-SiC samples grown on 6H SiC substrate by sublimation epitaxy under gas atmosphere. We focus on the low temperature photoluminescence and Raman measurements to show that compare to a growth process under vacuum atmosphere, the gas atmosphere favor the incorporation of impurities at already existing and/or newly created defect sites.
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Trans Tech Publications Inc., 2014. Vol. 778-780, s. 243-246
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Identifikatorer
URN: urn:nbn:se:liu:diva-106083DOI: 10.4028/www.scientific.net/MSF.778-780.243ISI: 000336634100057OAI: oai:DiVA.org:liu-106083DiVA, id: diva2:713613
2014-04-232014-04-232021-12-29Bibliografiskt granskad