Strained Ge FinFET structures fabricated by selective epitaxial growth 2014 (Engelska)Ingår i: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, 2014, s. 19-20Konferensbidrag, Publicerat paper (Refereegranskat)

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Abstract [en]

A one-growth step fabrication scheme for strained Ge FinFET structures has been successfully developed and implemented in a device fabrication scheme. From device point of view, the concept including two growth steps might be even more favorable. However, it requires an improvement of the pre-epi oxide removal from Si1-xGex surfaces.

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2014. s. 19-20

Nyckelord [en]

MOSFET;elemental semiconductors;epitaxial growth;germanium;semiconductor epitaxial layers;Ge;one-growth step fabrication scheme;pre-epi oxide removal;selective epitaxial growth;strained Ge FinFET structures;Epitaxial growth;Optimization;Rough surfaces;Silicon;Silicon germanium;Surface morphology;Surface treatment

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Textil-, gummi- och polymermaterial

Identifikatorer

URN: urn:nbn:se:liu:diva-128849DOI: 10.1109/ISTDM.2014.6874674OAI: oai:DiVA.org:liu-128849DiVA, id: diva2:932650

Konferens

7th International SiGe Technology and Device Meeting - ISTDM. 2-4 June 2014, Singapore

Tillgänglig från: 2016-06-02 Skapad: 2016-06-02 Senast uppdaterad: 2016-06-17

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Sun, Jianwu

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Sun, Jianwu

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Textil-, gummi- och polymermaterial

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