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Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism
Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces 43 Bd du 11 Novembre 1918, Villeurbanne CEDEX 69622, France.
Groupe d’Etude des Semiconducteurs, UMR 5650, CNRS and Université Montpellier 2, cc 074-GES, Montpellier CEDEX 5, 34095, France.
Department of Physics, Aristotle University of Thessaloniki, Thessaloniki GR-54 124, Greece.
Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces 43 Bd du 11 Novembre 1918, Villeurbanne CEDEX 69622, France.
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2010 (Engelska)Ingår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 312, nr 23, 3443-3450 s.Artikel i tidskrift (Refereegranskat) Published
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Abstract [en]

We report on a comparative investigation of the incorporation of group III, IV and V impurities in 3C–SiC heteroepitaxial layers grown by the vapour–liquid–solid (VLS) mechanism on on-axis α-SiC substrates. To this end, various Si-based melts have been used with addition of Al, Ga, Ge and Sn species. Homoepitaxial α-SiC layers grown using Al-based melts were used for comparison purposed for Al incorporation. Nitrogen incorporation depth profile systematically displays an overshoot at the substrate/epilayer interface for all the layers. Ga and Al incorporations follow the same distribution shape as N whereas this is not the case for the isoelectronic impurities Ge and Sn. This suggests some interaction between Ga/Al and N coming from the high bonding energy between the group III and V elements, which does not exist with Ge and Sn. This is why both incorporate as a cluster. A model of incorporation is proposed taking into account metal-N and metal-C bonding energies together with the solid solubility of the corresponding nitrides.

Ort, förlag, år, upplaga, sidor
2010. Vol. 312, nr 23, 3443-3450 s.
Nyckelord [en]
A1. Impurities, A1. Doping, A1. SIMS, A2. Growth from melt, A3. Liquid phase epitaxy, B2. Silicon carbide
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Oorganisk kemi
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URN: urn:nbn:se:liu:diva-128848DOI: 10.1016/j.jcrysgro.2010.08.058OAI: oai:DiVA.org:liu-128848DiVA: diva2:932651
Tillgänglig från: 2016-06-02 Skapad: 2016-06-02 Senast uppdaterad: 2016-06-17

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