The heteroepitaxial growth of 3C-SiC on 6H-SiC(0001) on-axis substrates is demonstrated in this study. A hot-wall CVD reactor working at a reduced pressure was used to perform growth experiments at temperatures between 1300 °C and 1500 °C. The addition of hydrogen chloride to standard precursors allowed a wide window of operating parameters, which resulted in the growth of very high quality and purity 3C-SiC layers, with a morphology characterized largely by single-domains, especially when nitrogen was intentionally added. Growth rate of 10 µm/h and n-type background doping in the low 10¹⁵ cm^–3 range were achieved.