Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials
Linköping University, The Institute of Technology
Article in journal (Refereed)
John Wiley and Sons
Physica Status Solidi (RRL) – Rapid Research Letters, ISSN 1862-6270
Semiconductors; chemical vapour deposition; silicon carbide; epitaxy
The heteroepitaxial growth of 3C-SiC on 6H-SiC(0001) on-axis substrates is demonstrated in this study. A hot-wall CVD reactor working at a reduced pressure was used to perform growth experiments at temperatures between 1300 °C and 1500 °C. The addition of hydrogen chloride to standard precursors allowed a wide window of operating parameters, which resulted in the growth of very high quality and purity 3C-SiC layers, with a morphology characterized largely by single-domains, especially when nitrogen was intentionally added. Growth rate of 10 µm/h and n-type background doping in the low 1015 cm–3 range were achieved.