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Seed layer synthesis effect on the concentration of interface defects and emission spectra of ZnO nanorods/p-GaN light-emitting diode
Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska fakulteten.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0002-9840-7364
Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0001-6235-7038
Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska fakulteten.
2017 (Engelska)Ingår i: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 214, nr 1, artikel-id 1600333Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

As the low-temperature aqueous chemical synthesis (LT-ACS), holds great promises for the synthesis of one-dimensional (1D) ZnO nanostructure-based light-emitting diodes (LEDs) and hence require parameter tuning for optimal performance. N-ZnO nanorods (NRs)/p-GaN heterojunction LEDs have been synthesized by the LT-ACS using ZnO nanoparticle (NPs) seed layers prepared with different precursor solutions. The effect of these seed layers on the interface defect properties and emission intensity of the as-synthesized n-Zn/p-GaN heterojunction LEDs has been demonstrated by spatially resolved cathodoluminescence (CL) and electroluminescence (EL) measurements, respectively. A significant reduction of the interface defects in the n-ZnO NRs/p-GaN heterostructure synthesized from a seed layer prepared from zinc acetate (ZnAc) with a mixture of potassium hydroxide (KOH) and hexamethylenetetramine (HMTA) (donated as ZKH seed) compared with those prepared from ZnAc and KOH (donated as ZK seed) is observed as revealed by spatially resolved CL. Consequently, the LEDs based on n-ZnO NRs/p-GaN prepared from ZKH seed show an improvement in the yellow emission (approximate to 578nm) compared to that based on the ZK seed as deduced from the electroluminescence measurements. The improvement in the yellow EL emission on the ZKH LED probably attributed to the low presence of the non-radiative defect as deduced by light-output current (L-I) characteristics analysis.

Ort, förlag, år, upplaga, sidor
WILEY-V C H VERLAG GMBH , 2017. Vol. 214, nr 1, artikel-id 1600333
Nyckelord [en]
GaN; interface defects; light-emitting diodes; low-temperature aqueous chemical synthesis; seed layers; ZnO
Nationell ämneskategori
Den kondenserade materiens fysik
Identifikatorer
URN: urn:nbn:se:liu:diva-136230DOI: 10.1002/pssa.201600333ISI: 000394423400006OAI: oai:DiVA.org:liu-136230DiVA, id: diva2:1086222
Anmärkning

Funding Agencies|Swedish Government Strategic Research Area in Materials Science on Functional Materials (Faculty Grant SFO-Mat-LiU) at Linkoping University [2009-00971]

Tillgänglig från: 2017-03-31 Skapad: 2017-03-31 Senast uppdaterad: 2017-11-29
Ingår i avhandling
1. Toward the Optimization of Low-temperature Solution-based Synthesis of ZnO Nanostructures for Device Applications
Öppna denna publikation i ny flik eller fönster >>Toward the Optimization of Low-temperature Solution-based Synthesis of ZnO Nanostructures for Device Applications
2017 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

One-dimensional (1D) nanostructures (NSs) of Zinc Oxide (ZnO) such as nanorods (NRs) have recently attracted considerable research attention due to their potential for the development of optoelectronic devices such as ultraviolet (UV) photodetectors and light-emitting diodes (LEDs). The potential of ZnO NRs in all these applications, however, would require synthesis of high crystal quality ZnO NRs with precise control over the optical and electronic properties. It is known that the optical and electronic properties of ZnO NRs are mostly influenced by the presence of native (intrinsic) and impurities (extrinsic) defects. Therefore, understanding the nature of these intrinsic and extrinsic defects and their spatial distribution is critical for optimizing the optical and electronic properties of ZnO NRs. However, identifying the origin of such defects is a complicated matter, especially for NSs, where the information on anisotropy is usually lost due to the lack of coherent orientation.

Thus, the aim of this thesis is towards the optimization of the lowtemperature solution-based synthesis of ZnO NRs for device applications. In this connection, we first started with investigating the effect of the precursor solution stirring durations on the deep level defects concentration and their spatial distribution along the ZnO NRs. Then, by choosing the optimal stirring time, we studied the influence of ZnO seeding layer precursor’s types, and its molar ratios on the density of interface defects. The findings of these investigations were used to demonstrate ZnO NRs-based heterojunction LEDs. The ability to tune the point defects along the NRs enabled us further to incorporate cobalt (Co) ions into the ZnO NRs crystal lattice, where these ions could occupy the vacancies or interstitial defects through substitutional or interstitial doping. Following this, high crystal quality vertically welloriented ZnO NRs have been demonstrated by incorporating a small amount of Co into the ZnO crystal lattice. Finally, the influence of Co ions incorporation on the reduction of core-defects (CDs) in ZnO NRs was systematically examined using electron paramagnetic resonance (EPR).

Ort, förlag, år, upplaga, sidor
Linköping: Linköping University Electronic Press, 2017. s. 67
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1871
Nationell ämneskategori
Den kondenserade materiens fysik Materialkemi
Identifikatorer
urn:nbn:se:liu:diva-141753 (URN)10.3384/diss.diva-141753 (DOI)9789176854815 (ISBN)
Disputation
2017-10-27, K3, Kåkenhus, Campus Norrköping, Norrköping, 10:15 (Engelska)
Opponent
Handledare
Tillgänglig från: 2017-10-06 Skapad: 2017-10-06 Senast uppdaterad: 2019-10-11Bibliografiskt granskad

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