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Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells
University of Oslo.
SINTEF.
University of Oslo.
University of Oslo.
Vise andre og tillknytning
2017 (engelsk)Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 897, s. 299-302Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×1017 atoms/cm2 in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 °C for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration was the same both within and outside the anomalous area. The buried boron box-like concentration profile can reach ~3×1021 cm-3 in the plateau region. In the anomalous area a broad emission band (possible IB) emerges at around ~1.7-1.8 eV, which may be associated with B-precipitates having a sufficiently high density.

sted, utgiver, år, opplag, sider
Trans Tech Publications, 2017. Vol. 897, s. 299-302
Emneord [en]
silicon carbide, 3C-SiC, cubic, boron, implantation, characterization, intermediate band, photovoltaics, solar cells
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-137579DOI: 10.4028/www.scientific.net/MSF.897.299OAI: oai:DiVA.org:liu-137579DiVA, id: diva2:1097224
Tilgjengelig fra: 2017-05-22 Laget: 2017-05-22 Sist oppdatert: 2017-06-02bibliografisk kontrollert

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