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Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto, Japan.
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-1000-0437
2017 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 111, no 7, article id 072101Article in journal (Refereed) Published
Abstract [en]

Previous work has shown that the concentration of shallow dopants in a semiconductor can be estimated from the photoluminescence (PL) spectrum by comparing the intensity of the bound-to-the- dopant exciton emission to that of the free exciton. In this work, we study the low-temperature PL of high-quality uncompensated Al-doped p-type 4H-SiC and propose algorithms for determining the Al-doping concentration using the ratio of the Al-bound to free-exciton emission. We use three different cryogenic temperatures (2, 41, and 79 K) in order to cover the Al-doping range from mid 10(14) cm(-3) up to 10(18) cm(-3). The Al-bound exciton no-phonon lines and the strongest free-exciton replica are used as a measure of the bound-and free-exciton emissions at a given temperature, and clear linear relationships are obtained between their ratio and the Al-concentration at 2, 41, and 79 K. Since nitrogen is a common unintentional donor dopant in SiC, we also discuss the criteria allowing one to determine from the PL spectra whether a sample can be considered as uncompensated or not. Thus, the low-temperature PL provides a convenient non-destructive tool for the evaluation of the Al concentration in 4H-SiC, which probes the concentration locally and, therefore, can also be used for mapping the doping homogeneity. Published by AIP Publishing.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2017. Vol. 111, no 7, article id 072101
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-140801DOI: 10.1063/1.4989648ISI: 000407948100008Scopus ID: 2-s2.0-85027401472OAI: oai:DiVA.org:liu-140801DiVA, id: diva2:1140884
Note

Funding Agencies|Swedish Research Council (VR)

Available from: 2017-09-13 Created: 2017-09-13 Last updated: 2017-10-09Bibliographically approved

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