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Study of the morphology of organic ferroelectric diodes with combined scanning force and scanning transmission X-ray microscopy
Empa, Switzerland; Eindhoven University of Technology, Netherlands.
TNO Dutch Org Appl Science Research, Netherlands.
TNO Dutch Org Appl Science Research, Netherlands.
Max Planck Institute Polymer Research, Germany.
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2018 (English)In: Organic electronics, ISSN 1566-1199, E-ISSN 1878-5530, Vol. 53, p. 242-248Article in journal (Refereed) Published
Abstract [en]

Organic ferroelectric diodes attract increasing interest as they combine non-destructive data read-out and low cost fabrication, two requirements in the development of novel non-volatile memory elements. The macroscopic electrical characteristics and performances of such devices strongly depend on their structural properties. Various studies of their global microscopic morphology have already been reported. Here, a multi-technique approach including different scanning force and X-ray microscopies permitted to reveal and locally study nanometer-scale unexpected sub-structures within a P(VDF-TrFE):F8BT ferroelectric diode. The strong impact of these structures on the local polarizability of the ferroelectric is shown. Two alternative fabrication methods are proposed that prevent the formation of these structures and demonstrate improved macroscopic device performances such as endurance and ON/OFF ratio.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2018. Vol. 53, p. 242-248
Keywords [en]
Ferroelectric; Organic switch; Morphology; Scanning force microscopy; X-ray microscopy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-144243DOI: 10.1016/j.orgel.2017.11.012ISI: 000418793500031OAI: oai:DiVA.org:liu-144243DiVA, id: diva2:1173645
Note

Funding Agencies|European Communities Seventh Framework Programme (FP7) of the MOMA project [248092]

Available from: 2018-01-12 Created: 2018-01-12 Last updated: 2018-02-02

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Kemerink, Martijn
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Complex Materials and DevicesFaculty of Science & Engineering
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