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A computational study on indium nitride ALD precursors and surface chemical mechanism
Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi.
2018 (engelsk)Independent thesis Advanced level (degree of Master (Two Years)), 40 poäng / 60 hpOppgave
Abstract [en]

Indium nitride has many applications as a semiconductor. High quality films of indium nitride can be grown using Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD), but the availability of precursors and knowledge of the underlaying chemical reactions is limited. In this study the gas phase decomposition of a new indium precursor, N,N-dimethyl-N',N''-diisopropylguanidinate, has been investigated by quantum chemical methods for use in both CVD and ALD of indium nitride. The computations showed significant decomposition at around 250°C, 3 mbar indicating that the precursor is unstable at ALD conditions. A computational study of the surface chemical mechanism of the adsorption of trimethylindium and ammonia on indium nitride was also performed as a method development for other precursor surface mechanism studies. The results show, in accordance with experimental data, that the low reactivity of ammonia is a limiting factor in thermal ALD growth of indium nitride with trimethylindium and ammonia.

sted, utgiver, år, opplag, sider
2018. , s. 19
Emneord [en]
Computational Chemistry, Chemical Vapour Deposition, Atomic Layer Deposition, Indium nitride, gas phase decomposition, surface mechanism
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-144426ISRN: LITH-IFM-A-EX--18/3437--SEOAI: oai:DiVA.org:liu-144426DiVA, id: diva2:1177404
Fag / kurs
Chemistry
Presentation
2018-01-12, 14:00 (engelsk)
Veileder
Examiner
Tilgjengelig fra: 2018-01-25 Laget: 2018-01-25 Sist oppdatert: 2018-01-25bibliografisk kontrollert

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